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So why does the die size look like it should be a smaller technology? However, conventional isolation gate structures provide leakage charge which flows, at least in part, into the storage nodes of the memory device. The bit lines are on a 2F half-metal pitch. Since the invention is configured in a zigzag form on the active inter-region connected to the bit line to be the active region of the I-type to a conceived to solve the above problems is the tilt about the bit line formed as a wave Wave shape, neighborhood, It is formed in which the active area around the bit lines means that the bit line contact increases the bit line contact margin is formed in the center of the active region and also or configured in a zigzag form in the inter-region above an active wordline a wave wave shape It is formed as to provide a semiconductor memory device having a 6F 2 DRAM cell to increase an interval of the active region it is an object.
Figure 4 is a cross-sectional, elevation view of a metal word line forming a gate for an access transistor taken generally taken through section line of Figure 2. The method of claim 5. WOA1 — 6f2 dram cell — Google Patents Also, the access word lines, when not selecting a column of access transistors, are maintained at this same potential of less than zero volts.
Media for cleanup for more information. The channel regions of the access transistors 14 and 26 are angled with respect to the bit lines and word lines. KR Kind code of ref document: The DRAM of claim 21, wherein each diffusion zone is angled at the same angle with respect to the access word lines. The method also includes providing a transistor having a load electrode coupled to the isolation gate.
In one embodiment, groups of isolation gates 56 are coupled together to a common first switch Ferroelectric memory using ferroelectric reference cells. The memory controller normally includes a control and address bus that is coupled to the DRAM Methods of identifying defects in an array of memory cells and related integrated circuitry.
EP Kind code of ref document: The active region 37 is formed in the up and down once each second kkeokin wave Wave shape around the bit line 35 and the contact area A. Bit lines are not shown but are disposed horizontally across the bit line contacts In a yet further aspect, the present invention includes 6r2 method of isolating a single row of memory cells in a 6F 2 DRAM array.
Device and method for stress testing a semiconduction memory. The DRAM of claim 13, wherein the access word lines are fabricated from a metal having a work function of between approximately 4. Similarly, the pair of cells 12 is connected to a bit line 24 providing one input to the sense amp In another aspect, the present invention includes a DRAM array. The method of claim 22, further comprising providing a second transistor configured to supply a stress voltage to the isolation gate in response to a test mode signal.
Each pair of cells is isolated from a neighboring pair of cells along a given silicon body, such as body 40, by isolation transistors disposed on opposite sides of the cell pairs. This results in field oxide growth where there is no masking nitride. Each cell comprises an access transistor and capacitor such as transistor 14 and capacitor In turn, this causes the DRAM integrated circuit to be larger than might be the 6t2 if other replacement arrangements for rows of memory cells that are defective were practicable.
In one embodiment, the dummy word lines are maintained at a potential less than zero volts relative to zero volts of the substrate. Isolation between each cell pair and its neighboring drsm pairs along a given bit line is obtained through isolation transistors, such as transistors 30 and 31 of FIG. Integrated circuit transistors are often isolated from one another with oxide regions. The isolation gate structure is biased to greatly reduce the number of mobile charge carriers 6g2 the semiconducting material beneath the isolation gate structure.
A third diffusion region 88 is shown adjacent the isolation gate 56and is coupled to another one of the storage node contacts Active areas 54 are shown as areas that are void of the stippling denoting the STI areas Guiding light at English Wikipediathe copyright holder of this work, hereby publishes it under the following licenses:.
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Mibar For optimum compatibility, obtain memory modules from the same vendors. Link to Asus; http: Safety Information Avoid dust, humidity, and temperature extremes. Connect the SATA signal cables. This 9-pin COM1 port is for serial devices.
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Many info like housing, special design, lambda oxygen sensors, temperature gradient, heater element, heater voltage, sensor voltage, and temperature bowch presented in the application note. Interested in Net Terms? Proudly powered by WordPress. Home About Contact Us. Secure SSL encrypted shopping! Most orders placed before 1: For Email Marketing you can trust. Packages ordered during this time may require additional business days before shipping.